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 ZVP4525G
250V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. SOT89 and SOT23-6 versions are also available. FEATURES * * * * * * * * * * * * High voltage Low on-resistance Fast switching speed Low gate drive Low threshold Complementary P-channel Type ZVN4525G SOT223 package
SOT223
APPLICATIONS Earth Recall and dialling switches Electronic hook switches High Voltage Power MOSFET Drivers Telecom call routers Solid state relays
D
Top View
S D
G
ORDERING INFORMATION
DEVICE ZVP4525GTA ZVP4525GTC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 1000 units 4000 units
DEVICE MARKING * ZVP4525G
ISSUE 1 - MARCH 2001 1
ZVP4525G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V GS =10V; TA=25C)(a) (V GS =10V; TA=70C)(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at T A =25C (a) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID ID I DM IS I SM PD T j :T stg LIMIT 250 40 -265 -212 -1 -0.75 -1 2 16 -55 to +150 UNIT V V mA mA A A A W mW/C C
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 63 26 UNIT C/W C/W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. NB High Voltage Applications For high voltage applications, the appropriate industry sector guidelines should be considered with regard to voltage spacing between conductors.
ISSUE 1 - MARCH 2001 2
ZVP4525G
CHARACTERISTICS
ISSUE 1 - MARCH 2001 3
ZVP4525G
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) V SD t rr Q rr 205 21 0.97 290 29 V ns nC T j =25C, I S =-200mA, V GS =0V T j =25C, I F =-200mA, di/dt= 100A/s t d(on) tr t d(off) tf Qg Q gs Q gd 1.53 3.78 17.5 7.85 2.45 0.22 0.45 3.45 0.31 0.63 ns ns ns ns nC nC nC V DS =-25V,V GS =-10V, I D =-200mA(refer to test circuit) V DD =-30V, I D =-200mA R G =50, V GS =-10V (refer to test circuit) C iss C oss C rss 73 12.8 3.91 pF pF pF V DS =-25 V, V GS =0V, f=1MHz V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 80 -0.8 -250 -285 -30 1 -1.5 10 13 200 -500 100 -2.0 14 18 V nA nA V mS I D =-1mA, V GS =0V V DS =-250V, V GS =0V V GS =40V, V DS =0V I =-1mA, V DS = V GS
D
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
V GS =-10V, I D =-200mA V GS =-3.5V, I D =-100mA V DS =-10V,I D =-0.15A
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
ISSUE 1 - MARCH 2001 4
ZVP4525G
TYPICAL CHARACTERISTICS
ISSUE 1 - MARCH 2001 5
ZVP4525G
CHARACTERISTICS
ISSUE 1 - MARCH 2001 6
TEST CIRCUITS
ZVP4525G
ISSUE 1 - MARCH 2001 7
ZVP4525G
PACKAGE DIMENSIONS PAD LAYOUT DETAILS
4.6
2.0 min
(3x)
2.3 6.8
1.5 min (3x)
2.0 min
3.8 min
Dim
Millimeters Min Max 6.7 3.7 1.7 0.8 3.1 0.32 Min 0.248 0.130 - 0.024 0.114 0.009
Inches Max 0.264 0.146 0.067 0.031 0.122 0.013
A B C D E F G H K L M
6.3 3.3 - 0.6 2.9 0.24
NOM 4.6 0.85 0.02 6.7 NOM 2.3 1.05 0.10 7.3
NOM 0.181 0.033 0.0008 0.264 0.041 0.004 0.287
NOM 0.0905
Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (631) 543-7100 Fax: (631) 864-7630 Zetex (Asia) Ltd. 3701-04 Metroplaza, Tower 1 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c) Zetex plc 2000 www.zetex.com
Ths publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - MARCH 2001 8


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